5962F9687302VYX View Datasheet(PDF) - Aeroflex UTMC
Part Name
Description
Manufacturer
5962F9687302VYX Datasheet PDF : 10 Pages
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RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VDD
Positive supply voltage
TC
Case temperature range
VIN
DC input voltage
LIMITS
4.5 to 5.5
-55 to +125
0 to VDD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL
PARAMETER
CONDITION
MINIMUM
VIH
VI L
VOL1
VOL2
VOH1
VOH2
CIN 1
CIO 1, 4
IIN
High-level input voltage
(TTL)
Low-level input voltage
(TTL)
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
IOL = 4.8mA, VDD = 4.5V (TTL)
IOL = 200µA, VDD = 4.5V (CMOS)
IOH = -400µA, VDD = 4.5V (TTL)
IOH = -2.0mA
IOH = -200µA VDD = 4.5V (CMOS)
IOH = -100µA
ƒ = 1MHz, V DD = 5.0V
Bidirectional I/O capacitance ƒ = 1MHz, V DD = 5.0V
VOUT = 0V
Input leakage current
VIN = 0V to VDD
2.4
2.4
3.5
4.45
VDD - 0.3
-1
IOZ
Three-state output leakage
VO = 0V to VDD
-10
current
VDD = 5.5V
OE = 5.5V
IOS 2,3
Short-circuit output current
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
-90
I D D(OP) 5
Supply current operating
@28.6MHz (35ns product)
@22.2MHz (45ns product)
TTL input levels (IOUT = 0),
VIL = 0.2V
VDD, PE = 5.5V
IDD(SB) Supply current standby
post-rad
CMOS input levels ,
VIL = VSS to 0.25V
CE = VDD -025, VIH = VDD -0.25V
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 2.5mA/MHz.
MAXIMUM UNIT
V
0.8
V
0.4
V
VSS + 0.05
V
V
V
15
pF
15
pF
1
µA
10
µA
90
mA
mA
100
mA
85
500
µA
3
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