5962F0151701QYC View Datasheet(PDF) - Aeroflex UTMC

Part Name

Description

Manufacturer

5962F0151701QYC

Radiation-Hardened 32K x 8 PROM

Aeroflex UTMC 

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

VDD

Positive supply voltage

TC

Case temperature range

VIN

DC input voltage

LIMITS

3.0 to 3.6

-55 to +125

0 to VDD

UNITS

V

°C

V

DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*

(VDD = 3.0V to 3.6V; -55°C < TC < +125°C)

SYMBOL

PARAMETER

CONDITION

MINIMUM

VIH

High-level input voltage

0.7VDD

VI L

VOL1

VOL2

VOH1

VOH2

CIN 1

CIO 1, 4

IIN

IOZ

Low-level input voltage

Low-level output voltage

IOL = 100µA, VDD = 3.0V

Low-level output voltage

High-level output voltage

IOL = 1.0mA, VDD = 3.0V

IOH = -100µA, VDD = 3.0V

High-level output voltage

IOH = -1.0mA, VDD = 3.0V

Input capacitance

Bidirectional I/O capacitance

ƒ = 1MHz, V DD = 3.3V

VIN = 0V

ƒ = 1MHz, VDD = 3.3V

VOUT = 0V

Input leakage current

VIN = 0V to VDD

Three-state output leakage

current

VO = 0V to VDD

VDD = 3.6V

OE = 3.6V

VDD-0.15

VDD-0.3

-3

-8

IOS 2,3

Short-circuit output current

VDD = 3.6V, VO = VDD

VDD = 3.6V, VO = 0V

-90

IDD1(OP)5

Supply current operating

@15.4MHz (65ns product)

CMOS input levels (IOUT = 0), VIL =

0.2V

VDD, PE = 3.6V, VIH = 3.0V

IDD2(SB) Supply current standby

post-rad

CMOS input levels VIL = VSS +0.25V

CE = VDD - 0.25 VIH = VDD - 0.25V

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).

1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

4. Functional test.

5. Derates at 1.5mA/MHz.

MAXIMUM UNIT

V

0.25V D D

V

VSS + 0.05

V

VSS + 0.10

V

V

V

15

pF

15

pF

3

µA

8

µA

90

mA

mA

50.0

mA

1.0

mA

4

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