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KTB631K-GR View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KTB631K-GR Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
ICP
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-120
-120
-5
-1
-2
1.5
8
150
-55150
UNIT
V
V
V
A
W
KTB631K
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
12 3
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.1+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75+_ 0.15
14.0 MIN
2.3+_ 0.1
0.75+_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1) Note
hFE(2)
fT
Cob
VCE(sat)
VBE(sat)
Turn-on Time
ton
Switching Time
Turn-off Time
toff
Storage Time
tstg
Note : hFE(1) Classification Y:100200, GR:160320
TEST CONDITION
VCB=-50V, IE=0
VEB=-4V, IC=0
IC=-10A
IC=-1mA
IE=-10A
VCE=-5V, IC=-50mA
VCE=-5V, IC=-500mA
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
I B2
IB1
1
24
20µsec 100
1uF
1uF
2V
VCE =-12V
IC =10I B1 =-10IB2 =50mA
-12V
MIN.
-
-
-120
-120
-5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
110
30
-0.15
-0.85
MAX.
-1
-1
-
-
-
320
-
-
-
-0.4
-1.2
UNIT
A
A
V
V
V
MHz
pF
V
V
-
80
-
-
100
-
nS
-
600
-
1998. 10. 31
Revision No : 1
1/2
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