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PBSS4330PAS Datasheet - NXP

Part Name
Description
MFG CO.
PBSS4330PAS
NXP
NXP Semiconductors. NXP
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General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• High temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) area requirements
• Leadless small SMD plastic package with soldarable side pads
• Exposed heat sink for excellent thermal and electrical conductivity
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• AEC-Q101 qualified

Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

 

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