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MW6S010N Datasheet - NXP

Part Name
Description
MFG CO.
MW6S010N
NXP
NXP Semiconductors. NXP
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450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP
    Power Gain — 18 dB
    Drain Efficiency — 32%
    IMD — -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

 

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