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MRF7S19120NR1 Datasheet - Freescale

Part Name
Description
MFG CO.
MRF7S19120NR1
Freescale
Freescale Semiconductor Freescale
Other PDF
  2007  
PDF
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1930-1990 MHz, 36 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @0.01% Probability on CCDF.
    Power Gain — 18 dB
    Drain Efficiency — 32%
    Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset — -38.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Output Power
• Pout @ 1 dB Compression Point  120 W CW

Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

 

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