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MRF6P27160HR6(2005) Datasheet - Freescale

Part Name
Description
MFG CO.
MRF6P27160HR6
Freescale
Freescale Semiconductor Freescale
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2600-2700 MHz, 35 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
   Power Gain — 14.6 dB
   Drain Efficiency — 22.6%
   ACPR @ 885 kHz Offset — -47.8 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

 

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