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MMH3111NT1 Datasheet - NXP

Part Name
Description
MFG CO.
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250--4000 MHz, 12 dB 22.5 dBm GaAs HFET GPA

The MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 to 4000 MHz such as cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features
● Frequency: 250 to 4000 MHz
● P1dB: 22.5 dBm @ 900 MHz
● Small--Signal Gain: 12 dB @ 900 MHz
● Third Order Output Intercept Point: 44 dBm @ 900 MHz
● Single 5 V Supply
● Internally Prematched to 50 Ohms
● Internally Biased
● Cost--effective SOT--89 Surface Mount Plastic Package
● In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

 

Part Name
Description
PDF
MFG CO.
Heterostructure Field Effect Transistor (GaAs HFET)
Freescale Semiconductor
DC-10 GHz, 1 Watt AIGaAs/GaAs HFET
Stanford Microdevices
DC-3 GHz, 0.5 Watt GaAs HFET
Stanford Microdevices
DC-3 GHz, 1.0 Watt GaAs HFET
Stanford Microdevices
DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET
Stanford Microdevices
0.05 - 6 GHz, 0.5 Watt GaAs HFET
Unspecified
0.05 - 6 GHz, 0.5 Watt GaAs HFET
Sirenza Microdevices => RFMD
0.05-12 GHz, 0.5 Watt GaAs HFET
Sirenza Microdevices => RFMD
DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET
Stanford Microdevices
DC-3 GHz, 1.0 Watt GaAs HFET
Unspecified

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