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MMG3013NT1 Datasheet - NXP

Part Name
Description
MFG CO.
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0--6000 MHz, 20 dB 20.5 dBm InGaP HBT

The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features
• Frequency: 0--6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small--Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Cost--effective SOT--89 Surface Mount Package
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

CASE 1514--02, STYLE 1 SOT--89 PLASTIC

 

Part Name
Description
PDF
MFG CO.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor

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