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HSB1386I Datasheet - Hi-Sincerity

Part Name
Description
MFG CO.
HSB1386I
Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
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HSB1386I image

Features
• Low VCE(sat).
    VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A)
• Excellent DC current gain characteristics.

Structure
   Epitaxial planar type PNP silicon transistor

 

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