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CPD93V Datasheet - Central-Semiconductor

Part Name
Description
MFG CO.
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PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 12.8 x 12.8 MILS
   Die Thickness 7.1 MILS
   Anode Bonding Pad Area 5.1 x 5.1 MILS
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au-As - 10,000Å

 

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