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BLS7G2933S-150 Datasheet - NXP

Part Name
Description
MFG CO.
BLS7G2933S-150
NXP
NXP Semiconductors. NXP
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General description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
   of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
   ◆ Output power = 150 W
   ◆ Power gain = 13.5 dB
   ◆ Efficiency = 47 %
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2.9 GHz to 3.3 GHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
   range

 

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