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AMS2300 Datasheet - AMSL

Part Name
Description
MFG CO.
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DESCRIPTION
The AMS2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power iloss are needed in a very small outline surface mount package.

FEATURE
● 20V/6.0A, RDS(ON) = 22mΩ (Typ.)
                        @VGS = 10V
● 20V/5.0A, RDS(ON) = 36mΩ
                        @VGS = 4.5V
● 20V/4.5A, RDS(ON) = 45mΩ
                        @VGS = 2.5V
● 20V/4.0A, RDS(ON) = 60mΩ
                        @VGS = 1.8V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and
   Maximum DC current capability
● SOT-23-3L package design

 

Part Name
Description
PDF
MFG CO.
N-Channel logic enhancement mode power field effect transistor
Advanced Monolithic Systems Inc
N-Channel logic enhancement mode power field effect transistor
Advanced Monolithic Systems Inc
N-Channel logic enhancement mode power field effect transistor
Advanced Monolithic Systems Inc
N-Channel Logic Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Unspecified
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.

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