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AFT09S282NR3 Datasheet - NXP

Part Name
Description
MFG CO.
AFT09S282NR3
NXP
NXP Semiconductors. NXP
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This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF

Features
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

 

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