These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
■ 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V
■ Low gate charge ( typical 48nC)
■ Low Crss ( typical 32.5pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
■ 175º maximum junction temperature rating