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65N06 Datasheet - KIA

Part Name
Description
MFG CO.
65N06
KIA
KIA Semiconductor Technology KIA
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Description
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
■ 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V
■ Low gate charge ( typical 48nC)
■ Low Crss ( typical 32.5pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
■ 175º maximum junction temperature rating

 

Part Name
Description
PDF
MFG CO.
65A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
60V N-Channel MOSFET
Fairchild Semiconductor
60V N-Channel MOSFET ( Rev : 2001 )
Fairchild Semiconductor
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TSC Corporation
60V N-Channel MOSFET
Alpha and Omega Semiconductor
60V N-Channel MOSFET
Fairchild Semiconductor
60V N-Channel MOSFET
Tiger Electronic
60V N-Channel MOSFET
Unspecified
60V N-Channel MOSFET
Alpha and Omega Semiconductor
60V N-Channel MOSFET
Alpha and Omega Semiconductor

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