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Part Name
Description
BD158 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BD158
NPN Epitxial Silicon Transistor
Fairchild Semiconductor
BD158 Datasheet PDF : 4 Pages
1
2
3
4
Typical Characteristics
1000
100
V
CE
= 10V
10
1
01.E0-040 1
01.E0 0- 31
0.01
0.1
1
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
I
C
MAX. (Pulsed)
1
0.1
10
µ
s
100
µ
s
0.01
1E-3
1
BD157
BD158
BD159
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1E-4
I
C
= 10 I
B
1E-3
0.01
0.1
1
I
C
[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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