2SA1016 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

2SA1016

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

2SA1016, 1016K/2SC2362, 2362K

Continued from preceding page.

Parameter

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Noise Level

Noise Peak Level

Symbol

Conditions

VCE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VNO(ave)

VNO(peak)

IC=(–)10mA, IB=(–)1mA

IC=(–)10µA, IE=0 [A1016, C2362]

IC=(–)10µA, IE=0 [A1016K, C2362K]

IC=(–)1mA, RBE=∞ [A1016, C2362]

IC=(–)1mA, RBE=∞ [A1016K, C2362K]

IE=(–)10µA, IC=0

VCC=30V, IC=1mA, Rg=56kΩ, VG=77dB/1kHz

VCC=30V, IC=1mA, Rg=56kΩ, VG=77dB/1kHz

Ratings

Unit

min

typ

max

(–)0.5 V

(–)120

V

(–)150

V

(–)100

V

(–)120

V

(–)5

V

35 mV

200 mV

--12

IC -- VCE

2SA1016, 1016K

--10

--8

--350µA--300µA--250µA

--200µA

--6

--150µA

--4

--100µA

--50µA

--2

IB=0

0

0

--10

--20

--30

--40

--50

Collector-to-Emitter Voltage, VCE – V ITR02951

IB -- VBE

--100

2SA1016, 1016K

VCE=--5V

--80

--60

--40

--20

00

--0.2

--0.4

--0.6

--0.8

--1.0

Base-to-Emitter Voltage, VBE – V ITR02953

fT -- IC

5

2SA1016, 1016K

VCE=--6V

3

2

100

7

5

3

2

1.0

2

3

5 7 10

2

Collector Current, IC – mA

3

5

ITR02955

IC -- VCE

12

2SC2362, 2362K

10

250µA

8

200µA

6

150µA

4

100µA

2

50µA

IB=0

0

0

10

20

30

40

50

Collector-to-Emitter Voltage, VCE – V ITR02952

IB -- VBE

100

2SC2362, 2362K

VCE=5V

80

60

40

20

0

0

0.2

0.4

0.6

0.8

1.0

Base-to-Emitter Voltage, VBE – V ITR02954

fT -- IC

5

2SC2362, 2362K

VCE=6V

3

2

100

7

5

3

2

1.0

2

3

5 7 10

2

Collector Current, IC – mA

3

5

ITR02956

No.572-2/4

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