BDX33B View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
BDX33B Datasheet PDF : 6 Pages
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BDX33B BDX33C BDX34B BDX34C
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
P(pk)
t1
t2
SINGLE
PULSE
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
RθJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 1. Thermal Response
20
10
5.0
TC = 25°C
2.0
5.0 ms
1.0 ms
dc
100
500 µs µs
20
10
5.0
TC = 25°C
2.0
5.0 ms
1.0 ms
dc
100
500 µs µs
1.0
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
0.2
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO
0.05
BDX34B
0.02
1.0 2.0 3.0
5.0 7.0 10
BDX34C
20 30 50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
1.0
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO
0.05
0.02
1.0 2.0 3.0
5.0 7.0 10
BDX33B
BDX33C
20 30 50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Fig. 3 is based on
TJ(pk) = 150_C; TC is variable depending on conditions. Se-
cond breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150_C. TJ(pk) may be calculated from the
data in Fig. . At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
10,000
5000
3000
2000
1000
500
TJ = 25°C
300
200
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
PNP
20
NPN
10
1.0 2.0
5.0 10 20
50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 3. Small–Signal Current Gain
Motorola Bipolar Power Transistor Device Data
300
TJ = 25°C
200
100
70
50
30
0.1 0.2
Cob
Cib
PNP
NPN
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
50 100
3
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