NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cutoff Current
Test Conditions
Vcb = 50V
IEBO
hFE
VCE(sat)
VBE(sat)
Emitter Cutoff Current
Veb = 3.0V
DC Current Gain
Vce = 10V, Ic = 1.0mA
Vce = 10V, Ic = 10mA
Vce = 10V, Ic = 150mA
Vce = 10V, Ic = 300mA
Collector-Emitter Saturation Voltage Ic = 150mA, Ib=15mA
Ic = 300mA, Ib=30mA
Base-Emitter Saturation Voltage Ic = 150mA, Ib=15mA
Small - Signal Characteristics
COB
Output Capacitance
CIB
Input Capacitance
fT
Current Gain - Bandwidth Product
Vcb = 10V, f = 1.0MHz
Veb = 0.5V, f = 100kHz
Vce = 20V, Ic = 50mA, f = 100MHz
Min Max Units
30 nA
30 nA
50
-
75
100
30
0.4
V
1.4
1.3
V
Typical
6
pF
20
pF
250
MHz
© 1998 Fairchild Semiconductor Corporation
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2227A.lwpPr19&63(Y1)