STP40N03L-20
PSPICE PARAMETERS
SUBCIRCUIT COMPONENTS
Symbol
Parameter
S1 (V14_16<0) (See Power Mosfet Model Subcircuit)
S2 (V16_11<0) (See Power Mosfet Model Subcircuit)
LD Drain Inductance
LG Gate Inductance
LS Source Inductance
RDRAIN Drain Resistance
RGATE Gate Resistance
CGD Gate Drain Capacitance
CGS Gate Source Capacitance
ALFA Drift Coeficient
RGN Negative Bias Resistance
DIODE DRAIN GATE (Depletion Capacitance)
Symbol
CJO
VJ
M
Parameter
Zero Bias p-n Capacitance
p-n Potential
p-n Grading Coefficient
DIODE DRAIN SOURCE
Symbol
CJO
VJ
M
TT
Parameter
Zero Bias p-n Capacitance
p-n Potential
p-n Grading Coefficient
Transit Time
N MOSFET
Symbol
Parameter
L
Channel Length
W
Channel Width
LEVEL Model Index
TOX Oxide Thickness
VTO Zero Bias Threshold Voltage
U0 Surface Mobility
THETA Mobility Modulation
Vmax Maximum Drift Velocity
KP Trans Conductance Coefficient
For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option
4/7
Value
ON
ON
8
10
10
1.9E-2
1
3.92
1.9
1E-3
10
Unit
nH
nH
nH
Ω
Ω
nF
nF
V-1
KΩ
Value
2.7
0.35
0.55
Unit
nF
V
Value
10
0.35
0.55
20
Unit
nF
V
nsec
Value
1
1
3
1
3.25
600
0.005
0
15
Unit
µMeter
µMeter
Meter
V
cm2/VS
V-1
Meter/sec
Amp/V2