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STP40N03L-20 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP40N03L-20 Datasheet PDF : 0 Pages
STP40N03L-20
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.66
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
40
300
75
28
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
30
Typ. Max.
250
1000
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 20 A
Resistance
VGS = 10V ID = 20 A
VGS = 5V ID = 20 A
Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
40
Typ.
1.6
0.016
0.019
Max.
2
0.02
0.04
0.023
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 20 A
Min.
15
Typ.
22
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1800 2300 pF
450 580 pF
180 230 pF
2/7
 

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