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STP6NB90FP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP6NB90FP Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP6NB90
®
STP6NB90FP
N - CHANNEL 900V - 1.7- 5.8A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
STP6NB90
STP6NB90FP
900 V
900 V
<2
<2
5.8 A
5.8 A
s TYPICAL RDS(on) = 1.7
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
June 1999
Value
STP6NB90 STP6NB90FP
900
900
± 30
5.8
5.8(*)
3.6
3.6(*)
23
23
135
40
0.92
0.32
4.5
4.5
2000
-65 to 150
150
(1) ISD ≤ 6Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9
 

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