DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

STP3NB80FP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP3NB80FP Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP3NB80
®
STP3NB80FP
N - CHANNEL 800V - 4.6- 2.6A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST P3N B80
ST P3N B80 FP
800 V
800 V
< 6.5
< 6.5
2.6 A
2.6 A
s TYPICAL RDS(on) = 4.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(••) Limited only by maximum temperature allowed
January 1999
Value
STP3NB80 STP3NB80FP
800
800
± 30
2.6
2.6 (••)
1.6
1.6 (••)
10.4
10.4
90
35
0.72
0.28
4.5
2000
-65 to 150
150
( 1) ISD 2.6 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMA
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/9
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]