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STD1NB80 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD1NB80 Datasheet PDF : 6 Pages
1 2 3 4 5 6
STD1NB80
N - CHANNEL 800V - 16- 1A - DPAK/IPAK
PowerMESHMOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD1NB80
800 V
< 20
1A
s TYPICAL RDS(on) = 16
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX "T4" FOR ORDERING IN
TAPE&REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
IPAK
TO-251
(Suffix "-1")
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 1999
Value
800
800
± 30
1
0.63
4
50
0.4
4.5
-65 to 150
150
(1) ISD ≤ 1Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
1/6
 

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