STP6NB80 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP6NB80 Datasheet PDF : 9 Pages
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STP6NB80
STP6NB80FP
N-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP6NB80
800 V < 1.9 Ω
5.7 A
STP6NB80FP
800 V < 1.9 Ω
5.7 A
s TYPICAL RDS(on) = 1.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC-DC & DC-AC CONVERTERS FOR
WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND
MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
IDM (l)
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
Unit
STP6NB80 STP6NB80FP
800
V
800
V
±30
V
5.7
5.7 (*)
A
3.6
3.6 (*)
A
22.8
22.8 (*)
A
125
40
W
1.0
0.32
W/°C
4
V/ns
-
2000
– 65 to 150
°C
150
°C
(1)ISD ≤5.76A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
1/9
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