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STB75NE75T4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STB75NE75T4 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
STB75NE75
N - CHANNEL 75V - 0.01 - 75A - D2PAK
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB75NE75
75 V <0.013
75 A
s TYPICAL RDS(on) = 0.01
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s DC MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM ()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1999
Va l u e
Un it
75
V
75
V
± 20
V
75
A
53
A
300
A
160
1.06
W
W /o C
7
V/ns
-65 to 175
oC
175
oC
( 1) ISD 75 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/8
 

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