STP45NF06 View Datasheet(PDF) -

STP45NF06

N-CHANNEL 60V - 0.022Ω - 38A TO-220

STripFET™ POWER MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STP45NF06

60V

<0.028Ω

38A

s TYPICAL RDS(on) = 0.022Ω

s EXCEPTIONAL dv/dt CAPABILITY

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(q) Pulse width limited by safe operating area

Value

Unit

60

V

60

V

±20

V

38

A

26

A

152

A

80

W

0.53

W/°C

7

V/ns

–65 to 175

°C

175

°C

(1) ISD ≤38A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

November 2000

1/6

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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