STP16NF06 View Datasheet(PDF) -

Electrical characteristics

2

Electrical characteristics

STP16NF06 - STP16NF06FP

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min.

ID = 250µA, VGS =0

60

VDS = max ratings

VDS = max ratings,

TC = 125°C

VGS = ± 20V

VDS = VGS, ID = 250µA

2

VGS = 10V, ID = 8A

Typ. Max. Unit

V

1

µA

10

µA

±100 nA

4

V

0.08 0.1

Ω

Table 4.

Symbol

Dynamic

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 15V, ID = 8A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30V, ID = 8A

RG = 4.7Ω VGS = 10V

(see Figure 15)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 48V, ID = 16A,

VGS = 10V

(see Figure 16)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Min. Typ. Max. Unit

6.5

S

315

pF

70

pF

30

pF

7

ns

18

ns

17

ns

6

ns

10

13

nC

3.5

nC

3.5

nC

4/14

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