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STD12NF06-2007 データシートの表示(PDF) - STMicroelectronics

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STD12NF06(2007) N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD12NF06 Datasheet PDF : 14 Pages
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STD12NF06 - STD12NF06-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A,
di/dt = 100A/µs,
VDD = 30V, TJ = 150°C
Figure 15 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
12 A
48 A
1.3 V
50
ns
65
µC
3.5
A
5/14
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