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STD12NF06-2007 データシートの表示(PDF) - STMicroelectronics

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STD12NF06(2007) N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD12NF06 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
STD12NF06 - STD12NF06-1
(TCASE=25°C unless otherwise specified)
Table 3. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 25mA, VGS = 0
60
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125°C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
3
4V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 6A
0.08 0.1
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15V, ID = 6A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 48V, ID = 12A
VGS = 10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
5
S
315
pF
70
pF
30
pF
10 12 nC
3.0
nC
3.5
nC
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 30V, ID = 6A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
7
ns
18
ns
17
ns
6
ns
4/14
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