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STD12NF06-2007 データシートの表示(PDF) - STMicroelectronics

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STD12NF06(2007) N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD12NF06 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD12NF06 - STD12NF06-1
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20K)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC=100°C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
TJ Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD 12A, di/dt 200A/µs, VDS V(BR)DSS, TJ TJMAX
3. Starting TJ = 25 oC, ID = 6A, VDD = 30V
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
60
60
± 20
12
8.5
48
30
0.2
15
140
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
5
100
275
Unit
°C/W
°C/W
°C
3/14
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