STP16NF06LFP View Datasheet(PDF) -

STP16NF06L

STP16NF06LFP

N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

STP16NF06L

STP60NF06LFP

60 V

60 V

<0.09 Ω

<0.09 Ω

s TYPICAL RDS(on) = 0.07Ω

s EXCEPTIONAL dv/dt CAPABILITY

s LOW GATE CHARGE AT 100 oC

s LOW THRESHOLD DRIVE

ID

16 A

11 A

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps therefore a remarkable manufacturing

reproducibility.

APPLICATIONS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s DC-DC & DC-AC CONVERTERS

s AUTOMOTIVE ENVIRONMENT

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

VISO

Insulation Withstand Voltage (DC)

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(*) Current Limited by package’s thermal resistance

August 2002

.

STP16NF06L

16

11

64

45

0.3

--------

Value

STP16NF06LFP

60

60

± 16

11(*)

7.5(*)

44(*)

25

0.17

23

127

2500

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

V

-55 to 175

°C

(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V

1/9

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