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STD19NE06L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD19NE06L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD19NE06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.14
Rthj-amb Thermal Resistance Junction-ambient
Max
100
Rthc-sink Thermal Resistance Case-sink
Typ
1.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 5 V
VGS = 10 V
ID = 9.5 A
ID = 9.5 A
Min.
1
Typ.
1.7
0.048
0.038
Max.
2.5
0.06
0.05
Unit
V
DYNAMIC
Symbol
gfs (*)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 9.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
7
Typ.
14
1350
195
58
Max.
Unit
S
pF
pF
pF
2/9
 

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