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STW16NA60 Ver la hoja de datos (PDF) - STMicroelectronics

Número de piezacomponentes DescripciónFabricante
STW16NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW16NA60 Datasheet PDF : 5 Pages
1 2 3 4 5
STW16NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V
ID = 8 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V
ID = 16 A
RG = 47
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 16 A VGS = 10 V
Min.
Typ.
25
21
240
155
18
78
Max.
30
25
200
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V
ID = 16 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
45
20
66
Max.
50
25
80
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 16 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 16 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
16
64
1.6
770
17
45
Unit
A
A
V
ns
µC
A
3/5
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