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STW16NA60 Ver la hoja de datos (PDF) - STMicroelectronics

Número de piezacomponentes DescripciónFabricante
STW16NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW16NA60 Datasheet PDF : 5 Pages
1 2 3 4 5
STW16NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW16NA60
VDSS
600 V
RDS(on)
< 0.4
ID
16 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.33
s ± 30V GATE TO SOURCE VOLTAGE
RANTING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
January 1998
Value
600
600
± 30
16
10
64
250
2
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/5
This is preliminary information on a new product now in development or undergoing evaluation.Details are subject to change without notice.
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