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STP20NM60 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP20NM60 Datasheet PDF : 0 Pages
Electrical characteristics
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
ID = 250 µA, VGS = 0
600
VDS = Max rating
VDS= Max rating,@125°C
VGS = ± 30V
VDS = VGS, ID = 250 µA
3
VGS = 10V, ID = 10 A
Typ. Max. Unit
V
1
µA
10 µA
±100 nA
4
5
V
0.25 0.29
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward transconductance VDS > ID(on) x RDS(on)max,
ID = 10 A
11
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
pF
1500
pF
350
pF
35
Coss eq. (2)
Equivalent output
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VGS = 0V, VDS = 0V to
480 V
VDD = 480 V, ID = 20 A,
VGS = 10V
(see Figure 16)
f = 1 MHz Gate DC
bias=0 Test signal
level = 20 mV
open drain
215
pF
39
54 nC
10
nC
20
nC
1.6
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
4/18
 

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