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STP15NK50Z View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP15NK50Z Datasheet PDF : 19 Pages
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Electrical ratings STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z
Table 2.
Rthj-a
Thermal data
Thermal resistance junction-ambient
max
Tl
Maximum lead temperature for
soldering purpose
1. When mounted on minimum foot-print
62.5
300
50 °C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=IAR, VDD=50V)
Value
Unit
14
A
300
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Gate-source breakdown voltage
Igs=±1mA
(Open Drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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