DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

E48NM50 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
E48NM50 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STE48NM50
Table 3: Absolute Maximum ratings
Symbol
Parameter
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( )
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (*) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( )Pulse width limited by safe operating area
(*) ISD 48A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthc-sink (**) Thermal Resistance Case-sink
(**) with conductive GREASE Applies
Max
Typ
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
±30
48
30
192
450
3.6
15
2500
–65 to 150
150
Unit
V
A
A
A
W
W/°C
V/ns
V
°C
°C
0.28
0.05
Max Value
15
810
°C/W
°C/W
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS= Max Rating, TC= 125°C
10
µA
100
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 24A
0.08
0.1
2/9
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]