STP36NF03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP36NF03L
STMicroelectronics
STP36NF03L Datasheet PDF : 6 Pages
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STP36NF03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 18 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 32 A VGS = 10 V
Min.
Typ.
16
200
18
3
5
Max.
21
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V
ID = 18 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
35
40
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD =36 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 36 A
VDD = 15 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
38
30
1.6
Max.
36
144
1.5
Unit
A
A
V
ns
nC
A
3/6
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