STP3020L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP3020L

N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET™ POWER MOSFET

STMicroelectronics 

®

STP3020L

N - CHANNEL 30V - 0.019Ω - 40A - TO-220

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on)

ST P3020 L

30 V < 0.022 Ω

s TYPICAL RDS(on) = 0.019 Ω

s LOW GATE CHARGE A 100oC

s APPLICATION ORIENTED

CHARACTERIZATION

ID

40 A

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-AC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

VDS

V DGR

VGS

ID

ID

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

G ate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

Ts tg Storage T emperature

Tj

Max. O perating Junct ion T emperature

(•) Pulse width limited by safe operating area

March 1999

Value

30

30

± 20

40

28

160

80

0.53

-65 to 175

175

Unit

V

V

V

A

A

A

W

W /o C

oC

oC

1/8

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