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STB3020L View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STB3020L N - CHANNEL 30V - 0.019Ω - 40A - D2PAK STripFET™ POWER MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STB3020L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
STB3020L
N - CHANNEL 30V - 0.019- 40A - D2PAK
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
ST B3020 L
30 V < 0.022 40 A
s TYPICAL RDS(on) = 0.019
s LOW GATE CHARGE A 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-AC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj
Max. O perating Junct ion T emperature
() Pulse width limited by safe operating area
March 1999
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
± 20
40
28
160
80
0.53
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/8
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