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IRF634-2001 查看數據表(PDF) - STMicroelectronics

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IRF634(2001) N-channel 250V - 0.38Ω - 8A TO-220/TO-220FP Mesh Overlay™ Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
IRF634 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRF634/IRF634FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 125 V, ID = 4 A
RG = 4.7VGS = 10 V
(see test circuit, Figure 3)
VDD = 200V, ID = 8 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
td(Voff)
tf
Turn-off- Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 125V, ID = 4 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Vclamp = 200V, ID = 8 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
13
ns
18
ns
37
51.8
nC
5.2
nC
14.8
nC
Min.
Typ.
51
16
Max.
Unit
ns
ns
12.5
ns
12.5
ns
28
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 8 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
198
1.1
11.3
Max.
8
32
1.7
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
Unit
A
A
V
ns
µC
A
3/9
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