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IRF634-2001 查看數據表(PDF) - STMicroelectronics

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IRF634(2001) N-channel 250V - 0.38Ω - 8A TO-220/TO-220FP Mesh Overlay™ Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
IRF634 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRF634
IRF634FP
N-CHANNEL 250V - 0.38- 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
IRF634
IRF634FP
250 V < 0.45
8A
250 V < 0.45
8A
s TYPICAL RDS(on) = 0.38
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
s IDEAL FOR MONITOR’s B+ FUNCTION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2001
Value
IRF634
IRF634FP
250
250
± 20
8
8(*)
5
5(*)
32
32(*)
80
30
0.64
0.24
5
-
2000
–65 to 150
150
(1) ISD8A, di/dt300 A/µs, VDDV(BR)DSS, TjTjMAX
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9
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