IRFP250 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
IRFP250 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 100V, ID =16 A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
VDD = 160V, ID = 33 A,
VGS = 10V, RG = 4.7Ω
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 160V, ID = 16 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 33 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 33 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
IRFP250
Min. Typ. Max. Unit
25
ns
50
ns
117
158
nC
15
nC
50
nC
Min. Typ. Max. Unit
60
ns
40
ns
100
ns
Min. Typ. Max. Unit
33
A
132
A
1.6
V
370
ns
5.4
µC
29
A
Safe Operating Area
Thermal Impedance
3/8
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