P40NF10L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
P40NF10L
STMicroelectronics
P40NF10L Datasheet PDF : 8 Pages
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STP40NF10L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V, ID = 20 A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
Qg
Total Gate Charge
VDD = 80V, ID =40A,VGS = 5V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V, ID = 20 A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
Vclamp =80V, ID = 40 A
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
Min.
Min.
Typ.
25
82
46
12
22
Typ.
64
24
51
29
53
Max.
64
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 40 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
40
A
160
A
1.3
V
110
ns
467
nC
8
A
Safe Operating Area
Thermal Impedance
3/8
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