STD5NE10-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD5NE10-1

N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET™ POWER MOSFET

STMicroelectronics 

®

STD5NE10

N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(o n)

ID

STD5NE10

100 V

< 0.4 Ω

5A

s TYPICAL RDS(on) = 0.32 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s AVALANCHE TESTED

s 100% AVALANCHE TESTED

s APPLICATION ORIENTED

CHARACTERIZATION

s ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s MOTOR CONTROL (DISK DRIVES, etc.)

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

3

2

1

3

1

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

S ymb ol

Parameter

VDS Drain-source Volt age (VGS = 0)

VDGR Drain- gate Voltage (RGS = 20 kΩ)

VG S

ID

ID

IDM(•)

Ptot

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1 ) Peak Diode Recovery voltage slope

Tstg Storage T emperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

May 1999

Va l u e

100

100

± 20

5

3.5

20

25

0.17

0.6

-65 to 175

175

( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

1/9

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