STD5NE10L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD5NE10L Datasheet PDF : 6 Pages
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STD5NE10L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
5
Rthj-amb Thermal Resistance Junction-ambient
Max
100
Rthc-sink Thermal Resistance Case-sink
Typ
1.5
Tl
Maximum Lead Temperature F or Soldering Purpose
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30 V)
Max Value
5
20
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 2.5 A
Resistance
VGS = 5 V ID = 2.5 A
Min.
1
T yp.
1.7
Max.
2.5
Unit
V
0.3
0.4
Ω
0.35 0.45
Ω
ID(o n)
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
5
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =2.5 A
Min.
2
T yp.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
345 450
pF
45
60
pF
20
25
pF
2/5
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