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STD5NE10L-1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD5NE10L-1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
®
TYPE
STD5NE10L
STD5NE10L
N - CHANNEL 100V - 0.3 - 5A - DPAK/IPAK
STripFETPOWER MOSFET
V DSS
RDS(on)
ID
100 V < 0.4
5A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.3
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
IPAK
TO-251
(Suffix ”-1”)
3
2
1
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction T emperature
() Pulse width limited by safe operating area
October 1998
Value
Unit
100
V
100
V
± 20
V
5
A
3.5
A
20
A
25
W
0.2
W /o C
6
-65 to 150
150
( 1) ISD 5 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/5
 

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