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STD15NF10T4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD15NF10T4 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
STD15NF10
(TCASE = 25°C unless otherwise specified)
Table 3. On(1) /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 12A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
100
V
1 µA
10 µA
±100 nA
2
3
4
V
0.06 0.065
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15V, ID = 7.5A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 80V, ID = 24A
VGS = 10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
12
S
870
pF
125
pF
50
pF
30 21 nC
6
nC
10
nC
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 30V, ID = 12A,
RG = 4.7Ω, VGS = 10V
Figure 12 on page 8
Min. Typ. Max. Unit
60
ns
45
ns
49
ns
17
ns
4/13
 

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