STD15NF10 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD15NF10

N-channel 100V - 0.060Ω - 23A - DPAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STD15NF10

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VDGR Drain-gate voltage (RGS = 20KΩ)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25°C

ID Drain current (continuous) at TC=100°C

IDM (1) Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

EAS (2) Single pulse avalanche energy

dv/dt (3) Peak diode recovery voltage slope

Tstg Storage temperature

TJ Max. operating junction temperature

1. Pulse width limited by safe operating area

2. Starting TJ = 25 oC, ID = 10A, VDD = 30V

3. ISD ≤13A, di/dt ≤300 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

100

100

± 20

23

16

92

70

0.46

180

9

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

mJ

V/ns

°C

Value

2.14

100

300

Unit

°C/W

°C/W

°C

3/13

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